Porphyrin “Mille-Feuilles” photo-electrodes
نویسندگان
چکیده
منابع مشابه
Porphyrin ‘‘Mille-Feuilles” photo-electrodes
A porphyrin ‘‘Mille-Feuilles” photo-electrode is fabricated layer-by-layer by deposition of anionic [zinc meso-tetrakis(p-sulfonato phenyl) porphyrin] (ZnTPPS ) and positively charged polypeptides on a 11-mercaptoundecanoic acid-modified gold electrode to form a photoactive film. This work demonstrates that it is possible to form 3D structures having regularly spaced layers of redox molecules. ...
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Optical excitation of the sequential supermolecule H2P −ZnP −Q induces an electron transfer from the free-base porphyrin (H2P ) to the quinone (Q) via the zinc porphyrin (ZnP ). This process is modeled by equations of motion for the reduced density matrix which are solved numerically and approximately analytically. These two solutions agree very well in a great region of parameter space. It is ...
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Chemoresistors working at room temperature are attractive for low-consumption integrated sensors. Previous studies show that this feature can be obtained with photoconductive porphyrins-coated ZnO nanostructures. Furthermore, variations of the porphyrin molecular structure alter both the chemical sensitivity and the photoconductivity, and can be used to define the sensor characteristics. Based ...
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In this study, cellulose nanocrystals (CNC) was prepared and meso-tetrakis(4-nitrophenyl)porphyrin (TNPP) was immobilized on it. The product was identified by techniques of UV-Vis, fourier transform infrared (FT-IR), diffuse reflectance UV-Vis spectroscopy (DRS), energy-dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The effect of an amount of a loaded porphyrin comp...
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We revisit the fundamental constraints that apply to flat band potential values at semiconductor photo-electrodes. On the physical scale, the Fermi level energy of a non-degenerate semiconductor at the flat band condition, EF(FB), is constrained to a position between the conduction band, EC, and the valence band, EV,: |EC| < |EF(FB)| < |EV| throughout the depth of the semiconductor. The same co...
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ژورنال
عنوان ژورنال: Journal of Electroanalytical Chemistry
سال: 2008
ISSN: 1572-6657
DOI: 10.1016/j.jelechem.2008.02.007